New Feature of Quantum Module: Schrödinger-Poisson Solver for Nanowire Application

This paper is focused on the stability of nchannel laser-crystallized polysilicon thin-fi lm transistors (TFTs) submitted to a hydrogenation process during the fabrication and with small grains dimension.With the aid of numerical simulations, we investigate the effects of static stress using two types of procedures: the on stress and the hot carrier stress. Results show that the variations of trap state density into the whole polysilicon layer and not only near the drain junction are responsible for the degradation of TFTs performances in both the two types of stress and that the interface trap states play a negligible role compared to the bulk trap states.